The company was founded in 1996. Modern design and technological solutions were developed together with specialists of the All-Russian Electrotechnical Institute named after V.I. Lenin in Moscow. Experimental and design work, design of automation systems and measuring equipment for electronics is engaged in the scientific and technical center of the company, established in Moscow in 2011. In 2016, the company launched serial production of IGBT modules, 95% of which were previously imported from abroad. In 2018, modules in the MIDA low-induction housing were put into production and an IGBT module based on silicon carbide (MCDA) and IGBT clamping structure (PIMA) was created.
JSC "Proton-Eleсtrotex" manufactures bipolar power semiconductor devices: diodes and thyristors. Modern complete production cycle, developed infrastructure, modern technological lines, measuring equipment and areas for "clean technologies" allow to meet the leading world standards. Structural units of the company produce diffusion semiconductor elements, structures with thermocompensator, measure semiconductor elements. Assembly and completion of tablet, modular and pin devices, as well as power assemblies with coolers on their basis are necessarily completed sealing of semiconductor devices and acceptance tests. In order to optimize the production process, the company has implemented an ERP system with modules for recording production progress, resource allocation and planning unit. Quality management system: all production processes are organized in strict accordance with the requirements of the quality management system (ISO 9001) and environmental management system (ISO 14001).
450 highly qualified employees
2000 m2 of production area
200,000 production units per year